期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 11, 期 3, 页码 249-265出版社
SPRINGER
DOI: 10.1007/s10825-012-0411-1
关键词
Multigate silicon nanowire transistor; Non-equilibrium Green's function (NEGF); Electron-phonon scattering; Random dopant fluctuation; Quantum transport; Device simulation; Impurity scattering
资金
- Science Foundation Ireland [05/IN/I888, 10/IN.1/I2992]
- European project SQWIRE [257111]
- European Community (EC) Seventh Framework Program through the Network of Excellence Nano-TEC [257964]
- Science Foundation Ireland (SFI) [10/IN.1/I2992] Funding Source: Science Foundation Ireland (SFI)
In this paper we study the influence of emission/absorption processes due to optical phonons on the electrical properties of multigate silicon nanowire transistors. We show that low-energy phonons reduce drain current through backscattering of carriers by emission/absorption processes while high-energy phonons redistribute the current energy spectrum along the nanowire channel through phonon emission without significantly reducing the drain current drive. The influence of emission/absorption is investigated in different multigate silicon FET structures with uniform channel, single impurity, random doping atom distribution and oxide tunnel barriers. A three-dimensional quantum mechanical device simulator based on the NEGF formalism in coupled mode-space approach is used to model electron transport in the presence of optical phonon scattering mechanism. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory.
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