4.3 Article

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

期刊

JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 10, 期 1-2, 页码 65-97

出版社

SPRINGER
DOI: 10.1007/s10825-011-0356-9

关键词

Continuum; Density-gradient; Electron transport; Semiconductor device simulation; Quantum confinement; Quantum tunneling; Thermodynamics

资金

  1. Office of Naval Research

向作者/读者索取更多资源

Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and engineering. After some introductory observations, the basis of the theory in macroscopic and microscopic physics is summarized, and its scattering-dominated and scattering-free versions are introduced. Remarks are also given about the underlying mathematics and numerics. A variety of applications of the theory to both quantum confinement and quantum tunneling situations are then reviewed. In doing so, particular emphasis is put on understanding the range of validity of the theory and on its unexpected power as a phenomenology. The article closes with a few comments about the future.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据