期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 10, 期 1-2, 页码 65-97出版社
SPRINGER
DOI: 10.1007/s10825-011-0356-9
关键词
Continuum; Density-gradient; Electron transport; Semiconductor device simulation; Quantum confinement; Quantum tunneling; Thermodynamics
资金
- Office of Naval Research
Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and engineering. After some introductory observations, the basis of the theory in macroscopic and microscopic physics is summarized, and its scattering-dominated and scattering-free versions are introduced. Remarks are also given about the underlying mathematics and numerics. A variety of applications of the theory to both quantum confinement and quantum tunneling situations are then reviewed. In doing so, particular emphasis is put on understanding the range of validity of the theory and on its unexpected power as a phenomenology. The article closes with a few comments about the future.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据