期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 9, 期 3-4, 页码 187-196出版社
SPRINGER
DOI: 10.1007/s10825-010-0314-y
关键词
Density gradient; Quantum corrections; Drift-Diffusion; Monte Carlo; Simulation; MOSFETs
With the scaling of field-effect transistors to the nanometre scale, it is well recognised that TCAD simulations of such devices need to account for quantum mechanical confinement effects. The most widely used method to incorporate quantum effects within classical and semi-classical simulators is via density gradient quantum corrections. Here we present our methodologies for including the density gradient method within our Drift-Diffusion and Monte Carlo simulators and highlight some of the additional benefits that this provides when dealing with the charge associated with random discrete dopants.
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