期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 7, 期 3, 页码 415-418出版社
SPRINGER
DOI: 10.1007/s10825-008-0242-2
关键词
Silicon nanowires; Silicon nanowire FETs; Tight-binding method; NEGF
资金
- EC Project PULLNANO [026828]
- ESF EUROCORES Programme Fundamentals of Nanoelectronics
- CNR
- EC under project Dewint [ERAS-CT-2003-980409]
We propose a very fast hierarchical simulator to study the transport properties of silicon nanowire FETs. We obtain the transverse wave functions and the longitudinal effective masses and band-edges of the lowest conduction bands from a nearest-neighbor sp(3)d(5)s* tight-binding study of an infinite nanowire with null external potential. Then we plug these parameters into a self-consistent Poisson-Schrodinger solver, using an effective mass approach and considering the bands decoupled. We apply this method, which gives quantitatively correct results with notable time savings, for the simulation of transport in two different silicon nanowire FETs.
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