期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 7, 期 3, 页码 305-308出版社
SPRINGER
DOI: 10.1007/s10825-008-0213-7
关键词
FinFET; Surface inversion; Bulk inversion; Supersymmetric quantum mechanics
The transition from surface inversion to bulk inversion in a Si FinFET is investigated in this paper using supersymmetric quantum mechanics. A double quantum well potential, which is the supersymmetric partner of a harmonic oscillator potential, was chosen. The fraction of charge residing inside the bulk was calculated as a function of fin width and electron density. For any electron density, more charge resides in the bulk as the fin width decreases. On the other hand, for a fixed fin width, charges move to the surface as the electron density increases. It was found that in Si FinFET for the electron density of 3x10(12) cm(-2) bulk inversion occurs when the fin width is about 8 nm.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据