期刊
NANOSCALE RESEARCH LETTERS
卷 10, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-015-0973-5
关键词
Quantum dots; Carrier tunneling; Photoluminescence; Carrier lifetime
资金
- Hebei Province 100-Talents Program of People's Republic of China [E2013100013]
- National Science Foundation of the U.S [DMR-1309989]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1309989] Funding Source: National Science Foundation
The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.
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