4.6 Review

Electron transport properties of three-dimensional topological insulators

期刊

FRONTIERS OF PHYSICS
卷 7, 期 2, 页码 165-174

出版社

HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-011-0190-3

关键词

topological insulator; electron transport; localization; electron-electron interaction; spin-orbit coupling

资金

  1. National Natural Science Foundation of China [10874210, 10974240]
  2. State Key Development Program for Basic Research of China (973 Program) [2007CB936800, 2009CB929101]
  3. Chinese Academy of Sciences

向作者/读者索取更多资源

We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.

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