期刊
FRONTIERS OF PHYSICS
卷 7, 期 2, 页码 165-174出版社
HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-011-0190-3
关键词
topological insulator; electron transport; localization; electron-electron interaction; spin-orbit coupling
资金
- National Natural Science Foundation of China [10874210, 10974240]
- State Key Development Program for Basic Research of China (973 Program) [2007CB936800, 2009CB929101]
- Chinese Academy of Sciences
We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.
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