期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 198, 期 -, 页码 14-19出版社
ELSEVIER
DOI: 10.1016/j.mseb.2015.03.014
关键词
Electrical properties; 3C-SiC; Interface state density; XRD; AFM
The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C-SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10(11) cm(-2) eV(-1) was observed with improving the crystalline quality. (C) 2015 Elsevier B.V. All rights reserved.
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