期刊
ADVANCED ENERGY MATERIALS
卷 5, 期 6, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201401689
关键词
alternative selective etchants; chemical etching; thin films; secondary phases; solar cells
类别
资金
- Flemish government, Department Economy, Science and Innovation
With the aim of developing a safe alternative to the KCN etchant for the removal of CuxSe secondary phases at the surface of Cu(In,Ga)Se-2 (CIGSe) absorber, a method based on ammonium sulfide (AS) chemical treatment is proposed. Although lower etching rates are observed compared with the KCN reference solution, the AS solution is found to selectively etch CuxSe phases. In addition, it allows modifying the surface chemical state of the CIGSe absorber by incorporation of sulfur. As a consequence, the minority carrier lifetime located close to the surface of the absorber is found to be improved. Furthermore, it is demonstrated that optimizing the AS treatment time induces a remarkable enhancement in the electrical performances of the CIGSe-based solar cells.
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