期刊
ADVANCED ENERGY MATERIALS
卷 3, 期 7, 页码 917-922出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201201083
关键词
atomic layer deposition; colloidal quantum dots; depleted bulk heterojunction; interface recombination; thin film photovoltaics
类别
资金
- King Abdullah University of Science and Technology (KAUST) [KUS-11-009-21]
- Ontario Research Fund Research Excellence Program
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- Ontario Graduate Scholarship (OGS) program
Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2-PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (V-OC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.
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