期刊
NATURE COMMUNICATIONS
卷 5, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms6246
关键词
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资金
- Welch Foundation [C-1716]
- NSF [ECCS-1327093, CNS-0821727, OCI-0959097]
- U.S. Army Research Office MURI grant [W911NF-11-1-0362]
- U.S. Army Research Lab (ARL) Director's Strategic Initiative (DSI) program on interfaces in stacked 2D atomic layered materials
- U.S. Office of Naval Research MURI grant [N000014-09-1-1066]
- Nanoelectronics Research Corporation [S201006]
- Wigner Fellowship through the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
- ORNL's Center for Nanophase Materials Sciences (CNMS)
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. DOE
- FAME Center
- MARCO, one of six centres of STARnet
- DARPA
- Singapore National Research Foundation under NRF RF Award [NRF-RF2013-08]
- Nanyang Technological University [M4081137.070]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1327093] Funding Source: National Science Foundation
Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.
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