期刊
NATURE COMMUNICATIONS
卷 5, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms4193
关键词
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资金
- US Army Research Office MURI [W911NF-11-1-0362]
- US Office of Naval Research MURI [N000014-09-1-1066]
- Nanoelectronics Research Corporation [S201006]
- Welch Foundation [TBF1473, C-1716]
- Singapore National Research Foundation under NRF RF Award [NRF-RF2013-08]
- Nanyang Technological University [M4081137]
- NSF [OCI-0959097]
- National NSF [11172124]
- China Postdoctoral Foundation [2012T50494]
- Research Funds for the Central Universities [NS2014006]
- Wigner Fellowship through the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL)
- ORNL's Center for Nanophase Materials Sciences (CNMS)
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. DOE
- FAME Center, one of six centres of STARnet, a Semiconductor Research Corporation program
- MARCO
- DARPA
Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen-and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.
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