4.8 Article

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122' iron-based superconductors

期刊

NATURE COMMUNICATIONS
卷 4, 期 -, 页码 -

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms2447

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资金

  1. Chinese NSF at IOP
  2. Ministry of Science and Technology (MOST) at IOP
  3. National Basic Research Program of China (973 Program) at IOP [2011CBA00103]
  4. National Basic Research Program of China (973 Program) at Zhejiang
  5. US NSF PIRE [OISE-0968226, DMR- 1105961]
  6. JAEA Reimei project at IOP
  7. JAEA Reimei project at Columbia
  8. JAEA Reimei project at PSI
  9. JAEA Reimei project at McMaster
  10. JAEA Reimei project TU Munich
  11. NSERC at McMaster
  12. CIFAR at McMaster
  13. Division Of Materials Research
  14. Direct For Mathematical & Physical Scien [1105961] Funding Source: National Science Foundation
  15. Office Of The Director
  16. Office Of Internatl Science &Engineering [0968226] Funding Source: National Science Foundation

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Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga3+, Mn2+) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)(2)As-2, which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr2Si2 (122) structure. Holes are doped via (Ba2+, K1+) replacements, while spins via isovalent (Zn2+, Mn2+) substitutions. Bulk samples with x = 0.1 - 0.3 and y = 0.05 - 0.15 exhibit ferromagnetic order with T-C up to 180 K, which is comparable to the highest T-C for (Ga, Mn) As and significantly enhanced from T-C up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn)(2)As-2 shares the same 122 crystal structure with semiconducting BaZn2As2, antiferromagnetic BaMn2As2 and superconducting (Ba,K)Fe2As2, which makes them promising for the development of multi-layer functional devices.

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