期刊
NATURE COMMUNICATIONS
卷 4, 期 -, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/ncomms2652
关键词
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资金
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0083540, 2011-0010274]
- U.S. National Science Foundation [DMR-1122594]
- National Research Council of Science & Technology (NST), Republic of Korea [13ZE1110] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0010274] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1122594] Funding Source: National Science Foundation
Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.
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