期刊
NATURE COMMUNICATIONS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms2387
关键词
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资金
- US DOE-BES [DE-FG02-04ER46027]
- National Basic Research Programme of China [2012CB927401, 2011CB921902, 2013CB921902, 2011CB922200]
- NSFC [91021002, 11174199, 11134008, 11274228]
- Shanghai Committee of Science and Technology, China [11JC1405000, 11PJ1405200, 12JC1405300]
- Shanghai Municipal Education Commission [11ZZ17]
- SRF for ROCS, SEM
- ARL [W911NF-12-2-0023]
- NSF-MRSCE [DMR-1121252]
- 'ShuGuang' project
- Shanghai Municipal Education Commission
- Shanghai Education Development Foundation
- Programme for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
Topological insulators are a unique class of materials characterized by a Dirac cone state of helical Dirac fermions in the middle of a bulk gap. When the thickness of a three-dimensional topological insulator is reduced, however, the interaction between opposing surface states opens a gap that removes the helical Dirac cone, converting the material back to a normal system of ordinary fermions. Here we demonstrate, using density function theory calculations and experiments, that it is possible to create helical Dirac fermion state by interfacing two gapped films-a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. These extrinsic helical Dirac fermions emerge in predominantly Bi bilayer states, which are created by a giant Rashba effect with a coupling constant of similar to 4eV . angstrom due to interfacial charge transfer. Our results suggest that this approach is a promising means to engineer topological insulator states on non-metallic surfaces.
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