期刊
NATURE COMMUNICATIONS
卷 1, 期 -, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/ncomms1096
关键词
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资金
- National Science Foundation [DMR-0906443, DMR-0704022]
- DARPA Seedling
- Fine Foundation
- DoE/BES [DE-FG02-07ER46416]
- Nanochip and David and Lucile Packard Fellowship
- US Department of Energy [DE-AC02-05CH11231]
- [DMR-0907191]
- Direct For Mathematical & Physical Scien [907191] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0906443] Funding Source: National Science Foundation
- Division Of Materials Research [907191] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [GRANTS:13765097] Funding Source: National Science Foundation
In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO3/SrTiO3 (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO3 bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.
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