Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation. The results show that decomposition and oxidation of carbon is more substantial than metal hydroxides, leading to the elimination of organic residues, correlated to a low interface trap density (S.S. = 0.45 V dec(-1), N-T = 1.11 x 10(12) cm(-2)) in the device. The resultant HRA indium oxide TFTs exhibit improved electrical characteristics such as the mobility, the on/off current ratio, and the subthreshold swing as well as bias stabilities under PBS and NBS conditions.