期刊
IEEE PHOTONICS JOURNAL
卷 5, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2013.2247587
关键词
III-Nitride; InGaN quantum wells (QWs); ternary InGaN substrate; optical gain; threshold current; laser diodes
资金
- U.S. National Science Foundation [ECCS 0701421, DMR 0907260, ECCS 1028490]
- Class of 1961 Professorship Fund
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907260] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1028490] Funding Source: National Science Foundation
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as similar to 3-5 times higher than that of conventional method with reduced wavelength shift. The threshold carrier density is reduced by similar to 15%-50% from the use of ternary substrate method for green-and yellow-emitting lasers.
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