期刊
IEEE PHOTONICS JOURNAL
卷 3, 期 2, 页码 263-267出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2011.2135340
关键词
III-Nitrides; AlGaInN; AlGaN; InGaN; AlGaN/GaN; ultraviolet; avalanche photodiodes; single photon detector; focal plane array; light-emitting diode (LED); solid state lighting; solar cell; intersubband devices; terahertz (THz)
We review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AlGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light-emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AlGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in III-Nitride optoelectronic devices.
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