期刊
IEEE PHOTONICS JOURNAL
卷 3, 期 4, 页码 686-695出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2011.2160529
关键词
Arsenic trisulfide; erbium (Er)-doped waveguide amplifiers; titanium-diffused lithium niobate
资金
- National Science Foundation
- Defense Advanced Research Projects Agency
A new configuration consisting of an arsenic trisulfide (As2S3) channel waveguide on top of an erbium (Er)-doped titanium-diffused x-cut lithium niobate (Er:Ti:LiNbO3) waveguide has been investigated by simultaneous analytical expressions, numerical simulations, and experimentation. Both simulation and experimental results have shown that this structure can enhance the optical gain, as predicted by the analytical expressions. An As2S3 channel waveguide has been fabricated on top of a conventional Er: Ti: LiNbO3 waveguide, where the higher refractive index As2S3 waveguide is used to pull the optical mode toward the substrate surface where the higher Er concentration yields an improved propagation gain. The relationship between the gain and As2S3 layer thickness has been evaluated, and the optimal As2S3 thickness was found by simulation and experimentation. Side integration was applied to reduce the extrapropagation loss caused by the titanium diffusion bump. The propagation gain has been improved from 1.1 to 2 dB/cm.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据