4.5 Article

Extreme Value Statistics in Silicon Photonics

期刊

IEEE PHOTONICS JOURNAL
卷 1, 期 1, 页码 33-39

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2009.2025517

关键词

Extreme value statistics; L-shape probability distribution; Raman scattering; silicon photonics

向作者/读者索取更多资源

L-shape probability distributions are extremely non-Gaussian functions that have been surprisingly successful in describing the occurrence of extreme events ranging from stock market crashes, natural disasters, structure of biological systems, fractals, and optical rogue waves. We show that fluctuations in stimulated Raman scattering, as well as in coherent anti-Stokes Raman scattering, in silicon can follow extreme value statistics and provide mathematical insight into the origin of this behavior.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据