期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 3, 期 47, 页码 23955-23963出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ta06878a
关键词
-
资金
- University Grant Council of the University of Hong Kong [10401466, 201111159062]
- General Research Fund [HKU711813]
- RGC-NSFC Grant [N_HKU709/12]
- Collaborative Research Fund from the Research Grants Council of Hong Kong Special Administrative Region, China [CUHK1/CRF/12 G]
- CAS-Croucher Funding Scheme for Joint Laboratories [CA514601]
Hole transport layers (HTLs) with large work function (WF) tuning ability for good energy level alignment with deep highest occupied molecular orbital (HOMO) level donor materials are desirable for high-performance and high open-circuit voltage (V-OC) organic solar cells (OSCs). Here, a novel low-temperature and solution-process approach to achieve WF tuning in HTLs is proposed. Specifically, the HTLs made from 2,3,4,5,6-pentafluorobenzylphosphonic acid (F5BnPA) incorporated graphene oxide (GO) and molybdenum oxide (MoOx) solution (representing two possible classes of HTLs where carriers transport via valence and conduction bands, respectively) offer continuous WF tuning (the tuning range as large as 0.81 eV) by controlling F5BnPA's concentration. By employing a deep HOMO donor material, OSCs using the composite HTLs can achieve improved performances with largely increased V-OC (0.92 V for GO:F5BnPA versus 0.65 V for pristine GO; 0.91 V for MoOx:F5BnPA versus 0.88 V for pristine MoOx). The enhanced performance can be experimentally and theoretically explained by the decreased hole injection barrier (HIB) for GO or equivalent HIB (i.e. electron extraction barrier) for MoOx and enhanced surface recombination velocity, which contribute to eliminating S-shaped current-voltage characteristics. Consequently, the incorporation of F5BnPA can efficiently tune HTL WF for high V-OC OSCs and extend HTL applications in organic electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据