期刊
SCIENCE OF ADVANCED MATERIALS
卷 4, 期 2, 页码 332-336出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2012.1287
关键词
ZnSe Nanoribbons; Gallium Doping; n-Type; Blue-Light; Nano-Photodetectors
资金
- National Natural Science Foundation of China [60806028, 20901021, 61106010, 51172151, 21101051, 91027021]
- Fundamental Research Funds for the Central Universities [2010HGXJ0221]
- Foundation for Young Scientists in Higher Education Institutions of Anhui Province [2011SQRL009ZD]
- Chinese Ministry of Education [NCET-08-0764]
Nano-photodetectors were constructed from n-type ZnSe nanoribbons (NRs) with controlled gallium doping, and the device performances were systematically studied. The ZnSe:Ga NR photodetectors show spectral sensitivity in the blue-light range with high photo-to-dark current ratio (>10(3)) and fast response speed (<0.1 s), which also function with excellent stability and reproducibility. The photoconductivity of the ZnSe NRs is greatly enhanced by Ga doping. The responsivity and photoconductive gain of the ZnSe:Ga NRs have substantially increased compared with the intrinsic ZnSe NRs. It is expected that the ZnSe:Ga NRs will have important applications in the future nano-optoelectronics as high-sensitive blue-light nano-photodetectors.
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