期刊
SCIENCE OF ADVANCED MATERIALS
卷 3, 期 4, 页码 602-606出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2011.1189
关键词
Thermoelectric; Diamond-Like Semicinductor; p-Type Doping
资金
- National Science Foundation [NSF-CBET-0754029]
- Center for Revolutionary Materials for Solid State Energy Conversion
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001054]
- U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0754029] Funding Source: National Science Foundation
We present the first systematic doping study on the ternary semiconductor Cu3SbSe4. We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have previously been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 mu W/cmK(2). The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT = 0.72 at 630 K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.
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