3.9 Article

Structural inhomogeneity in Silicon-On-Insulator probed with coherent X-ray diffraction

期刊

出版社

WALTER DE GRUYTER GMBH
DOI: 10.1524/zkri.2010.1354

关键词

Coherent; Inhomogeneity; X-ray diffractive imaging; Silicon-On-Insulator

资金

  1. EPSRC [EP/G068437/1] Funding Source: UKRI
  2. Engineering and Physical Sciences Research Council [EP/G068437/1] Funding Source: researchfish

向作者/读者索取更多资源

We report our research on X-ray micro-beam diffraction and coherent X-ray diffractive imaging techniques to study structural inhomogeneities in Silicon-On-Insulator continuous plain wafers. Inhomogeneities were measured quantitatively and attributed to limitations of the manufacturing process. 3-dimensional image reconstructions were performed by using our Error-Reduction and Hybrid-Input-Output iterative algorithms. These revealed images of the focussed X-ray beam passing through the active layer of the wafer.

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