期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 5, 期 5, 页码 1487-1491出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2458039
关键词
Buffer layers; coevaporation; Cu(In, Ga) Se-2 (CIGS); heterojunctions; photovoltaic cells; scanning electron microscopy; short-circuit currents; thin-film devices
资金
- German Federal Ministry of Economic Affairs and Energy (BMWi) [0325715]
- Ministry of Finance and Economics Baden-Wurttemberg (KaliTan)
New processing developments in the Cu(In, Ga)Se-2 (CIGS)-based solar cell technology have enabled best cell efficiencies to exceed 21%. The key innovation involves the alkali post-deposition treatment (PDT) of the CIGS film. Furthermore, the range of optimal CIGS growth parameters and the minimal thickness of the CdS buffer layer is affected by the process modifications. In 2013, we reported a 20.8% record device with PDT. Later optimizations, e.g., in the composition profile and CdS buffer layer thickness as discussed in this study, enabled us to increase the photocurrent density with only a slight loss in open-circuit voltage and unchanged fill factor, resulting in the current world record of 21.7% efficiency. Furthermore, a record efficiency of 21.0% could be achieved with a Cd-free Zn(O,S) buffer layer. This contribution presents measurements, simulations, and a discussion of the photocurrent increase.
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