Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se-2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.