期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 4, 期 9, 页码 P347-P350出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0041509jss
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资金
- National Chung-Shan Institute of Science & Technology of Taiwan
- National Science Council of Taiwan [MOST 104-3113-E-008-007]
In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150 degrees C and 200 degrees C, respectively. The results showed that the defect states (V-Se and V-Cu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200 degrees C for 30 min. (C) 2015 The Electrochemical Society. All rights reserved.
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