4.6 Article

Synthesis and properties of β-Ga2O3 nanostructures

期刊

VACUUM
卷 85, 期 8, 页码 802-805

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2010.12.001

关键词

beta-Ga2O3 nanostructure; Magnetron sputtering; Annealing

资金

  1. National Natural Science Foundation of China [90301002, 90201025, 10474059]

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A novel method was utilized to synthesize one-dimensional beta-Ga2O3 nanostructures. In this method, beta-Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia in a quartz tube. The as-obtained samples were analyzed in detail using the methods of X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDX) attached to the HRTEM instrument. The results show that the formed nanostructures are single-crystalline Ga2O3. The annealing temperature has an evident influence on the morphology of the beta-Ga2O3 nanostructures. The growth mechanism of the beta-Ga2O3 nanostructures is also discussed by conventional vapor solid (VS) mechanism. (C) 2010 Elsevier Ltd. All rights reserved.

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