期刊
VACUUM
卷 85, 期 3, 页码 365-367出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2010.07.009
关键词
ZnMgO; Thin film; In-N codoping; Magnetron sputtering
资金
- National Basic Research Program of China [2006CB604906]
- Specialized Research Fund for the Doctoral Program of Higher Education [20070335010, 200803351004]
In-N codoped p-type ZnMgO films have been prepared by direct current reactive magnetron sputtering. The effect of Mg content on the properties of In-N codoped ZnMgO films was examined. The Mg content in the film is directly proportional to that in the target suggesting the same sputtering mechanism of Zn and Mg. The p-type behaviour of ZnMgO films was deteriorated with the Mg content increasing. The bandgap engineering, due to the fact of Mg substituting Zn, was realized in p-type ZnMgO films. (C) 2010 Elsevier Ltd. All rights reserved.
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