期刊
VACUUM
卷 84, 期 6, 页码 797-802出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2009.10.040
关键词
Nitrogen-doped titanium dioxide; Photoelectrochemistry; DC magnetron sputtering; Band gap modification
资金
- National 863 project of China [2006AA05Z121]
- National Science Foundation of China [20673028]
- Shanghai Leading Academic Discipline Project [B113]
Nitrogen-doped titanium dioxide thin films with visible light photoresponse were prepared by oxidation of sputtered TiNx films, whose nitrogen contents can be easily changed by controlling the volume ratio of N-2/(Ar + N-2) during reactive direct current (DC) magnetron sputtering process. The reference TiO2 sample was also deposited by the same method under Ar/O-2 gas mixture. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoemission spectroscopy, UV-vis spectrophotometry and photoelecrochemical measurements. The formation of anatase type TiO2 is confirmed by XRD. SEM measurement indicates a rough surface morphology with sharp, protruding modules after annealing treatment. Optical properties reveal an extended tailing of the absorption edge toward the visible region due to nitrogen presence. The band gap of the N-doped sample is reduced from 3.36 eV to 3.12 eV compared with the undoped one. All the N-doped samples show red shift in photoresponse towards visible region and improved photocurrent density under visible irradiance is observed for the N-doped samples. (C) 2009 Elsevier Ltd. All rights reserved.
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