期刊
VACUUM
卷 83, 期 6, 页码 965-969出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2008.11.005
关键词
Germanium carbon; Thin film; Infrared transmission; Magnetron sputtering
Germanium carbon (GeC) thin films were prepared on ZnS substrates by reactive RF magnetron sputtering in Ar and CH4 mixtures with a Ge disc as the target. H content in the films was studied as a function of the deposition parameters and low H content GeC film was obtained. RF power had a little effect oil IR absorptions, hence had a little effect on H content. IR absorption of the GeC film increased a little with the increase in partial pressure of CH4 as Well as total pressure of gas mixture. Increase in substrate temperature decomposed CH4 and CHx in the GeC film into C and H and H was desorbed from the film, lowering the IR absorption. However, high substrate temperature prevented CH4 or CHx from adsorbing onto the substrate, which decreased C content in the GeC film and increased the film's refractive index, Higher annealing temperature of the GeC film reduced H content, but high annealing temperature (500 degrees C) caused the graphitization of the GeC film and destroyed its continuity. (C) 2008 Elsevier Ltd. All rights reserved.
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