Synthesis of boron carbonitride (BCN) films by plasma-enhanced chemical vapor deposition using trimethylamine borane as a molecular precursor

Boron carbonitride (BCN) films were deposited on Si substrates by plasma-enhanced chemical vapor deposition (PECVD) using a powdered precursor of trimethylamine borane (C3H12NB). The effect of using different carrier gasses and microwave powers was investigated. Field emission scanning electron microscopy (FE-SEM) revealed that the films have a nanofibrous structure with elongated features 20 nm in diameter and 200 nm in length. Fourier transfer infrared (FT-IR) spectroscopy was used to investigate chemical bonding states present in the deposited films. The FT-IR results suggested that the films have multiple chemical bonding states including C-N, B-N, and B-C bonds, as well as oxygen incorporation in the form of B-O bonds. Mixing the powdered precursor with Molecular sieve was found to reduce the oxygen content in the films by removing surface adsorbed water from the precursor. (C) 2009 Elsevier Ltd. All rights reserved.