4.6 Article Proceedings Paper

Synthesis and characterization of BN thin films prepared by plasma MOCVD with organoboron precursors

期刊

VACUUM
卷 83, 期 3, 页码 582-584

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2008.04.030

关键词

Boron nitride (BN); MOCVD; Trimethyl borate; Hardness; XRD; Raman; FT-IR

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Boron nitride (BN) films have contributed to improvement of tribological parts. For this study, we prepared films using plasma MOCVD with an organoborate precursor and investigated the mechanical properties and structure of BN films. The BN films were formed on specimens of silicon wafers and tungsten carbide (WC) substrates at low temperatures of less than 500 degrees C. Hardness tests were carried out to evaluate mechanical properties of BN films. The structure of BN films was investigated using XRD, Raman, and FT-IR spectra. (C) 2008 Elsevier Ltd. All rights reserved.

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