期刊
VACUUM
卷 82, 期 8, 页码 867-870出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2007.10.011
关键词
pulsed plasma; magnetron sputtering; deposition rate
In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307]. (C) 2007 Elsevier Ltd. All rights reserved.
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