期刊
ULTRAMICROSCOPY
卷 109, 期 5, 页码 644-648出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2008.11.011
关键词
Atom probe; FIB; SEM; Specimen preparation; (Ga,Mn)As; DMS; Diluted magnetic semiconductor
类别
The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters. (C) 2008 Elsevier B.V. All rights reserved.
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