期刊
TRIBOLOGY INTERNATIONAL
卷 66, 期 -, 页码 330-336出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.triboint.2013.06.009
关键词
Chemical mechanical polishing; Hydrodynamic lubrication; Wafer bending; Wafer orientation
资金
- Science Fund for Creative Research Groups [51021064]
- Natural Science Foundation of China [51275263]
- China Postdoctoral Science Foundation [2012M520251]
A novel in-situ wafer bending/orientation measurement system, cooperated with our previous developed fluid pressure mapping system, was developed for 12-inch chemical mechanical polishing (CMP) equipment. Wafer bending and wafer orientation are studied for copper wafer sliding against the IC1000 pad. The results reveal a micron level wafer bending, and a slight wafer pitch angle of 10(-5) degree. Both the wafer pitch angle and interfacial fluid pressure increase with the speed till a critical speed and then decrease. The convergent-dominated wedged gap caused by the convexly bended, trailing edge pitched wafer gives a reasonable explanation to the positive-dominated fluid pressure. (C) 2013 Elsevier Ltd. All rights reserved.
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