期刊
ADVANCED OPTICAL MATERIALS
卷 3, 期 10, 页码 1389-1396出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201500150
关键词
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资金
- National High Technology Research and Development Program of China (863 Program) [2013AA031903]
- youth 973 program [2015CB932700]
- National Natural Science Foundation of China [51222208, 51290273, 91433107]
- Doctoral Fund of Ministry of Education of China [20123201120026]
- ARC DECRA [DE120101569]
- DP [DP140101501]
- Engineering Seed Funding Scheme in Monash University
- Natural Science Foundation of Jiangsu Province [BK20130328]
- China Postdoctoral Science Foundation [2014M551654]
- Jiangsu Province Postdoctoral Science Foundation [1301020A]
Graphene is an attractive optoelectronic material for light detection because of its broadband light absorption and fast response time. However, the relatively low absorption cross-section, fast recombination rate, and the absence of gain mechanism have limited the responsivity of pure graphene-based phototransistor to approximate to 10(-2) A W-1. In this work, a photoconductive gain of approximate to 10(9) electrons per photon and a responsivity of approximate to 6.0 x 10(5) A W-1 are demonstrated in a hybrid photodetector that consists of monolayer graphene covered with a thin layer of dispersive organolead halide perovskite (CH3NH3PbBr2I) islands. The unprecedented performance is attributed to the effective charge transfer and photogating effect, which were evidenced by photoluminescence quenching, time-resolved photoluminescence decay, scanning near-field optical microscopy, and photocurrent mapping. Unlike previous report which used perovskite bulk thin film, the perovskite islands have low bulk recombination rate of photogenerated carriers. The device also shows broad photodetection spectral range from ultraviolet to visible (250-700 nm), affording new opportunities for scalable UV detectors and imaging sensors.
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