4.6 Article

A Si-Locked Phosphine Oxide Host with Suppressed Structural Relaxation for Highly Efficient Deep-Blue TADF Diodes

期刊

ADVANCED OPTICAL MATERIALS
卷 4, 期 4, 页码 522-528

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201500673

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资金

  1. NSFC [61176020, 51373050]
  2. New Century Excellent Talents Supporting Program of MOE [NCET-12-0706]
  3. Program for Innovative Research Team in University (MOE) [IRT-1237]
  4. Science and Technology Bureau of Heilongjiang Province [ZD201402, JC2015002]
  5. Education Bureau of Heilongjiang Province [2014CJHB005]
  6. Fok Ying-Tong Education Foundation for Young Teachers in the Higher Education Institutions of China [141012]
  7. Harbin Science and Technology Bureau [2015RAYXJ008]

向作者/读者索取更多资源

Thermally activated delayed fluorescence (TADF) diodes with deep-blue emission and a state-of-the-art external quantum efficiency are realized by using a novel phosphine oxide host with a high triplet energy of 2.98 eV and a Si-locked planar rigid structure. These results manifest the effectiveness of our insulating lock strategy in suppressing structural-relaxation induced nonradiative energy losses.

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