期刊
ADVANCED OPTICAL MATERIALS
卷 4, 期 1, 页码 120-125出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201500402
关键词
-
资金
- Air Force Office of Scientific Research (AFOSR): Presidential Early Career Award in Science & Engineering (PECASE) grant [FA9550-09-1-0482]
In this work, flexible phototransistors with a back gate configuration based on transferrable single-crystalline Si nanomembrane (Si NM) have been demonstrated. Having the Si NM as the top layer enables full exposure of the active region to an incident light and thus allows for effective light sensing. Flexible phototransistors are performed in two operation modes: 1) the high light detection mode that exhibits a photo-to-dark current ratio of 10 5 at voltage bias of V-GS < 0.5 V, and V-DS = 50 mV and 2) the high responsivity mode that shows a maximum responsivity of 52 A W-1 under blue illumination at voltage bias of V-GS = 1 V, and V-DS = 3 V. Due to the good mechanical flexibility of Si NMs with the assistance of a polymer layer to enhance light absorption, the device exhibits stable responsivity with less than 5% of variation under bending at small radii of curvatures (up to 15 mm). Overall, such flexible phototransistors with the capabilities of high sensitivity light detection and stable performance under the bending conditions offer great promises for high-performance flexible optical sensor applications, with easy integration for multifunctional applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据