4.6 Article

Perfect Extinction of Terahertz Waves in Monolayer Graphene over 2-nm-Wide Metallic Apertures

期刊

ADVANCED OPTICAL MATERIALS
卷 3, 期 5, 页码 667-673

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201400546

关键词

atomic-layer lithography; graphene; nanogaps; plasmonics; terahertz nanophotonics

资金

  1. U.S. Department of Defense (DARPA Young Faculty Award) [N66001-11-1-4152]
  2. Engineering and Physical Sciences Research Council
  3. Leverhulme Trust
  4. National Science Foundation (NSF) through the National Nanotechnology Infrastructure Network program
  5. NSF through the Materials Research Science and Engineering Center
  6. Office of Naval Research Young Investigator Award
  7. EPSRC [EP/H000917/2] Funding Source: UKRI
  8. Engineering and Physical Sciences Research Council [EP/H000917/2] Funding Source: researchfish

向作者/读者索取更多资源

High carrier mobility and tunability in graphene enable fundamental studies for plasmonics and various applications. Despite its versatility, however, single-layer graphene (SLG) suffers from poor coupling efficiency to electromagnetic waves, presenting a major challenge for photonic applications. Compared with visible or infrared radiation, terahertz (THz) waves exhibit higher absorption in SLG due to Drude-like intraband transitions, but the wavelength-to-SLG size mismatch becomes even more dramatic. Here, we experimentally demonstrate 99% extinction of THz wave transmission when SLG covers the openings of 2-nm-wide (approximate to lambda/1 000 000) slits through a metal film. By resonantly coupling THz waves through annular nanogaps, the extremely localized fields lead to near-perfect extinction and strong absorption in SLG. Atomic-layer lithography is used to produce these nanometer-wide, millimeter-long gaps over an entire 4-in. wafer. Furthermore, by integrating these devices with an ionic liquid, enhanced intraband absorption in the SLG leads to 80% modulation of THz waves with an operational voltage as low as 1.5 V.

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