期刊
THIN SOLID FILMS
卷 665, 期 -, 页码 168-172出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.09.022
关键词
Thin films solar cells; Kesterite; Sputtering; Grading
类别
资金
- Swiss National Science Foundation (SNF) in the network of the Indo-Swiss Joint Research Programme (ISJRP) [IZLIZ2_157140/1]
- Horizon2020 program under the project STARCELL [H2020-NMBP-03-2016-720907]
- Swiss National Science Foundation (SNF) [IZLIZ2_157140] Funding Source: Swiss National Science Foundation (SNF)
Bandgap grading is often employed in thin film solar cell absorbers for creating the back surface field that can reduce interface recombination at the back contact. Here, we investigate different pathways to obtain back graded Cu2Zn(Sn1-x,Gex)Se-4 thin film solar cells based on a co-sputtered metal precursor and rapid thermal annealing route. The absorber bandgap can be precisely tuned for the whole compositional range of x = 0...1. While Ge does not accumulate towards the back in absorbers fabricated from uniform precursor, Ge-back graded absorbers can be obtained from stacked metal precursors. A linear back grading with a bandgap energy difference of up to 40 meV has been achieved. However, no significant improvement in open-circuit voltage and near-infrared response could be observed for the kesterite devices. This indicates that even steeper gradients are required to obtain an effective back surface field.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据