期刊
THIN SOLID FILMS
卷 562, 期 -, 页码 592-596出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.04.006
关键词
Hafnium-indium zinc oxide; Oxide thin film transistors; Oxygen; Double active layer
类别
资金
- National Natural Science Foundation of China [51302165, 61274082, 61077013]
- 863 project [2010AA3A337, 2008AA03A336]
- China Postdoctoral Science Foundation [2012T50387]
We investigate the electrical performance and negative bias stability of thin film transistors (TFTs) using double active layer. Double active layer is consisting of low oxygen content HfInZnO film as bottom channel and high oxygen content HfInZnO film as back channel. The HfInZnO-TFT with double channel layer shows a high mobility of 6.8 cm(2)/Vs, a lowthreshold voltage of -0.3 V, and a threshold voltage shifts of 0.65 V under -20 V gate bias for 7200 s. The results suggest that HfInZnO with low oxygen content as the bottom channel could provide high carrier concentration and good HfInZnO/Al2O3 interface to improve field-effect mobility and negative bias stress stability. HfInZnO with high oxygen content as back channel can control the conductivity to reduce the off current of TFT. Thus, a double-active-layer structure is an effective way to improve the electrical performance of HfInZnO-TFT. (C) 2014 Elsevier B.V. All rights reserved.
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