期刊
THIN SOLID FILMS
卷 547, 期 -, 页码 285-288出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.11.046
关键词
ZnO; Cu-doped ZnO; XRD; XANES; Band gap
The role of Cu in Cu-doped ZnO (ZnO: Cu) thin films, with a nominal composition of Zn1-xCuxO (x=0, 0.02, 0.05 and 0.07) was investigated using X-ray diffraction (XRD), X-ray absorption near-edge structure (XANES) and UV-visible transmittance measurements. The ZnO: Cu thin films showed single phase wurtzite-hexagonal similar to single crystal structure. The XRD peak positions shifted towards higher scattering angle with increasing Cu doping, indicating substitution of Cu atoms at Zn sites. Spectral features of Cu K-edge XANES indicated that the Cu in ZnO: Cu films is the +2 valence state. The average transmittance of ZnO: Cu films in the visible region was >= 85% and red shift in the optical band gap was observed with increasing Cu doping in ZnO. (C) 2012 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据