4.4 Article

Structure, electronic properties and electron energy loss spectra of transition metal nitride films

期刊

THIN SOLID FILMS
卷 528, 期 -, 页码 49-52

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.06.086

关键词

Transition metal nitrides; Microstructure; Electronics properties; EELS

资金

  1. European Union (European Regional Development Fund- ERDF)
  2. Greek national funds through the Operational Program THESSALY- MAINLAND GREECE AND EPIRUS of the National Strategic Reference Framework (NSRF)

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We present a thorough and critical study of the electronic properties of the mononitrides of the group IV-V-VI metals (TiN, ZrN, HfN, NbN, TaN, MoN, and WN) grown by Pulsed Laser Deposition (PLD). The microstructure and density of the films have been studied by X-Ray Diffraction (XRD) and Reflectivity (XRR), while their optical properties were investigated by spectral reflectivity at vertical incidence and in-situ reflection electron energy loss spectroscopy (R-EELS). We report the R-EELS spectra for all the binary TMN and we identify their features(metal-d plasmon and N-p + metal-d loss) based on previous ab-initio band structure calculations. The spectral positions of p + d loss peak are rationally grouped according to the electron configuration (i.e. of the respective quantum numbers) of the constituent metal. The assigned and reported R-EELS spectra can be used as a reference database for the colloquial in-situ surface analysis performed in most laboratories. (c) 2012 Elsevier B.V. All rights reserved.

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