期刊
THIN SOLID FILMS
卷 529, 期 -, 页码 234-237出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.09.034
关键词
Graphene; Direct-patterning; Electrical property; Transmittance; ZnO thin films
类别
资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012R1A2A2A01011014]
- Business for Technology Innovation Development
- Korea Small and Medium Business Administration [S2043273]
- Korea Evaluation Institute of Industrial Technology (KEIT) [S2043273] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A2A2A01011014] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A direct-patternable ZnO thin film was prepared by photochemical solution deposition and the electrical properties were improved by the incorporation of graphene. The transmittance of graphene-incorporated ZnO thin films was similar to that of ZnO thin film due to the incorporation of graphene, which slightly decreased the crystallinity of the ZnO thin films. In addition, the resistivity was improved due to the enhanced mobility due to the p-bond nature of the graphene surface. Graphene-incorporated ZnO thin film was direct-patterned through photochemical solution deposition without a photoresist or conventional dry etching process. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of ZnO thin films can be improved by incorporating graphene. (C) 2012 Elsevier B.V. All rights reserved.
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