期刊
THIN SOLID FILMS
卷 544, 期 -, 页码 224-229出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.03.115
关键词
TiN; Physical vapor deposition; Corrosion resistance; Conductivity; Microstructure
类别
资金
- National Natural Science Foundation of China [51201106]
- start-up fund for junior young teacher of Shanghai Jiao Tong University [13X100040022]
- Ministry of Science and Technology of the People's Republic of China [2009DFB50350]
As potential application in bipolar plate of polymer electrolyte membrane fuel cell, the microstructure, corrosion resistance and the electrical conductivity of titanium nitride (TiN) and Si doped titanium nitride (Ti0.9Si0.1N) films deposited by magnetron sputtering with different bias voltages are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), electrochemical test and four-point probe method, respectively. XRD, SEM and AFM results reveal that the texture and topography of TiN film depend on the bias voltage and incorporation of Si. When the bias voltage is -20 V and -30 V, the TiN and Ti0.9Si0.1N films exhibit a dense (111) plane preferred growth, denser structure and smoother surface topography. The potentiodynamic test results indicate that the TiN and Ti0.9Si0.1N films have higher chemical inertness and better corrosion resistance. The films can satisfy the requirement of current density for bipolar plate materials. Incorporation of Si element into TiN film makes the passive current density more stable. Four-point probe measurement results show that the resistivity of both TiN and Ti0.9Si0.1N films reaches minimum when the deposition bias voltage is -20 V. Crown Copyright (C) 2013 Published by Elsevier B. V. All rights reserved.
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