期刊
THIN SOLID FILMS
卷 534, 期 -, 页码 636-639出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.02.114
关键词
Bridged-grain; Thin film transistor; Nanoimprint
类别
资金
- Hong Kong Research Grants Council Theme Based Research Scheme [T23-713/11]
Bridged-grain polycrystalline silicon thin film transistors were fabricated containing twelve submicron sized doped conductive regions formed along the channel. These regions were formed using a grating-shaped implantation mask, patterned using an ultraviolet curable nanoimprint lithography technique. The resulting devices have increased on-state current, low leakage current and good uniformity. (C) 2013 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据