期刊
THIN SOLID FILMS
卷 531, 期 -, 页码 430-435出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.01.078
关键词
ZnO thin film; Optical band-gap; Nonparabolicity
类别
资金
- Korea Institute of Science and Technology (KIST) [2E22832]
- Converging Research Center Program through the National Research Foundation of Korea (NRF) [2009-0082023]
- Ministry of Education, Science and Technology
- Korea Science and Engineering Foundation (KOSEF) [2009-0064868]
- National Research Foundation of Korea [2009-0064868, 2009-0082023] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10(16)-10(21) cm(-3), were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. (C) 2013 Elsevier B. V. All rights reserved.
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