期刊
THIN SOLID FILMS
卷 521, 期 -, 页码 229-234出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.11.065
关键词
IrMn thin films; CH4/O-2/Ar gas; Inductively coupled plasma reactive ion etching; Magnetic tunnel junction
In this study, the etch characteristics of IrMn magnetic thin films patterned with TiN hard mask were investigated using an inductively coupled plasma reactive ion etching in CH4/Ar and CH4/O-2/Ar gas mixes. As the CH4 concentration increased in the CH4/Ar gas, the etch rates of IrMn and TiN films simultaneously decreased, while the etch selectivity increased and etch profiles improved without any redeposition. The addition of O-2 to the CH4/Ar gas led to an increase in the etch selectivity and a higher degree of anisotropy in etch profile. The dc-bias voltage and gas pressure were varied to examine and optimize the etching process of IrMn films. Low gas pressure and high dc-bias voltage improved the etch profile, which displayed a high degree of anisotropy. Surface analysis of etched films by X-ray photoelectron spectroscopy was performed to identify the existence of compounds during etching. (C) 2011 Elsevier B. V. All rights reserved.
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